Advancing Tin-Halide Perovskite Transistors Through Vapor Deposition
Tin-halide perovskites, a group of tin-based materials with a crystal structure similar to calcium titanate, are emerging as promising alternatives to conventional semiconductors. These materials have drawn interest for their potential use in fabricating p-channel thin-film transistors (TFTs), which regulate and amplify electrical signals in electronic devices. However, producing uniform, high-quality perovskite films using scalable, industry-compatible techniques has remained a significant hurdle to their integration into commercial electronics.
Researchers at Pohang University of Science and Technology have introduced a new approach to address this challenge, as detailed in Nature Electronics. Their method centers on vapor deposition, using thermal evaporation and incorporating lead chloride (PbCl₂) as a reaction initiator to improve film quality and electronic performance.
“We’ve transitioned from solution-based methods to vapor-deposited tin-halide perovskites for p-channel transistors,” said Professor Yong-Young Noh, senior author of the study. “While solution processes achieved high hole mobility, they don’t align well with large-scale manufacturing. Vapor deposition, already used in the OLED industry, offers a scalable path.”
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The team compared solution processing with vapor deposition, identifying critical parameters for achieving tin-halide perovskite films with the required hole densities and mobilities. Their fabrication strategy involves sequentially depositing PbCl₂, tin iodide (SnI₂), and cesium iodide (CsI). The PbCl₂, placed as the base layer, plays a vital role in triggering solid-state reactions that convert the precursors into uniform cesium-tin-iodide (CsSnI₃) perovskite films, while also optimizing the hole density for use in transistors.
This approach resulted in p-channel transistors with average hole mobilities of 33.8 cm²/Vs and on/off current ratios around 10⁸—performance levels comparable to, and in some cases exceeding, those of solution-processed devices. Previous vapor-deposited perovskite transistors exhibited much lower mobilities, often below 1 cm²/Vs, which limited their commercial viability.
Beyond performance, the vapor-deposited transistors demonstrated markedly improved stability. When benchmarked against IGZO-based oxide transistors used in OLEDs, the new devices delivered superior results, indicating their potential to enhance OLED performance and reduce power consumption.
The researchers believe their work could pave the way for broader adoption of tin-halide perovskites in large-area electronics, including cost-effective very large-scale integration (VLSI) systems and vertically stacked circuits. They also hope it will inspire further exploration of vapor-deposition strategies for scalable transistor fabrication in future electronic applications.